Computation of direct tunneling gate leakage currents in nano-MOSFETs using ensemble full band Monte Carlo with quantum correction

2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Volumn , Issue , 2007, Pages 76-80

  Kajen, R S ^b   Chang, Ken K F ^b   Bai, Ping ^a,b   Li, Erping ^a,b  

^a IEEE

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

Direct tunneling; Dual thickness gate ocide structure; Full band Monte Carlo; Gate leakage; Quantum correction

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON BEAM LITHOGRAPHY; EXCAVATION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; LEAKAGE CURRENTS; METALLIC COMPOUNDS; METALS; MONTE CARLO METHODS; MOS CAPACITORS; MOS DEVICES; NANOTECHNOLOGY; QUANTUM ELECTRONICS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS; TECHNOLOGY; TUNNELING (EXCAVATION);

CHANNEL LENGTHS; DIRECT TUNNELING; DUAL THICKNESS GATE OCIDE STRUCTURE; FULL BAND MONTE CARLO; GATE LEAKAGE; GATE OXIDES; GATE-LEAKAGE CURRENTS; INTERNATIONAL CONFERENCES; METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; MONTE CARLO; N -CHANNEL; NANO-MOSFETS; QUANTUM CORRECTION; QUANTUM CORRECTIONS; QUANTUM DRIFT-DIFFUSION; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 52949099181     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2007.4601144     Document Type: Conference Paper

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