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Volumn 24, Issue 18, 2008, Pages 10402-10406

Dry tin dioxide hollow microshells and extreme ultraviolet radiation induced by CO2 laser illumination

Author keywords

[No Author keywords available]

Indexed keywords

TIN; TITANIUM COMPOUNDS; ULTRAVIOLET RADIATION;

EID: 52649130772     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la800766q     Document Type: Article
Times cited : (11)

References (32)
  • 1
    • 33845213476 scopus 로고    scopus 로고
    • Bakshi, V. Ed, SPIE Press: Bellingham, WA
    • Bakshi, V. Ed. EUV source for lithography; SPIE Press: Bellingham, WA, 2006.
    • (2006) EUV source for lithography
  • 10
    • 52649104598 scopus 로고    scopus 로고
    • The specification of the EUV source is described in ref 1. The estimation of the minimum mass of tin was based on the experiments, for example, as shown in ref 4. More information about low density tin for EUV light is described in the following: Nanomaterials to generate extreme ultraviolet (EUV) light. In Encyclopedia of Nanoscience and Nanotechnology, 2nd ed.; Nalwa, E. H., Ed.; American Science Publishers: Stevenson Ranch, CA, 2008; in press.
    • The specification of the EUV source is described in ref 1. The estimation of the minimum mass of tin was based on the experiments, for example, as shown in ref 4. More information about low density tin for EUV light is described in the following: Nanomaterials to generate extreme ultraviolet (EUV) light. In Encyclopedia of Nanoscience and Nanotechnology, 2nd ed.; Nalwa, E. H., Ed.; American Science Publishers: Stevenson Ranch, CA, 2008; in press.
  • 11
    • 0030848621 scopus 로고    scopus 로고
    • (a) Decher, G. Science 1997, 277, 1232-1237.
    • (1997) Science , vol.277 , pp. 1232-1237
    • Decher, G.1
  • 27
    • 52649144464 scopus 로고    scopus 로고
    • Extreme ultraviolet light source. JP Patent 297737, 2003
    • Extreme ultraviolet light source. JP Patent 297737, 2003.
  • 28
    • 52649173979 scopus 로고    scopus 로고
    • Laser plasma X-ray sources and semiconductor exposure apparatus. JP Patent 345698, 1999
    • Laser plasma X-ray sources and semiconductor exposure apparatus. JP Patent 345698, 1999.
  • 29
    • 52649111824 scopus 로고    scopus 로고
    • X-ray generation method, X-ray generator. JP Patent 85940, 2006
    • X-ray generation method, X-ray generator. JP Patent 85940, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.