Theoretical investigation of the hBN(0001)/cBN(111) interface

Diamond and Related Materials

Volumn 17, Issue 11, 2008, Pages 1963-1968

  Guerini, S ^a   Miwa, R H ^b   Schmidt, T M ^b   Piquini, P ^c  

^a FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

^b FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^c FEDERAL UNIVERSITY OF SANTA MARIA   (Brazil)

Author keywords

Cubic boron nitride; Interface electronic properties; Microstructure

Indexed keywords

BORON; BORON NITRIDE; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; MODEL STRUCTURES; NITRIDES; NONMETALS; PROBABILITY DENSITY FUNCTION;

111 SURFACES; BAND OFFSETS; CONDUCTION BANDS; CUBIC BORON NITRIDE (C BN); FERMI ENERGY; FIRST PRINCIPLES; FORMATION ENERGIES; HEXAGONAL BORON-NITRIDE; INTERFACE ELECTRONIC PROPERTIES; INTERFACE MODELING; INTERFACE REGIONS; MICROSTRUCTURE; PLANE WAVES; PSEUDO-POTENTIALS; PSEUDOMORPHIC GROWTH; STRUCTURAL MODELING;

CUBIC BORON NITRIDE;

EID: 52249104638     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.05.001     Document Type: Article

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