Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers

Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

  Meisner, Mark J ^a   Vaillancourt, Jarrod ^b   Lu, Xuejun ^b  

^a RAYTHEON COMPANY   (United States)

^b University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; INFRARED DETECTORS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM;

CAPPING LAYERS; DUAL BANDS; INAS QUANTUM DOTS; INFRARED PHOTO DETECTORS; QUANTUM DOT LAYERS; QUANTUM-DOT INFRARED PHOTODETECTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 51849167273     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/9/095016     Document Type: Article

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