MBE growth of HgCdTe on large-area Si and CdZnTe wafers for SWIR, MWIR and LWIR detection

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1274-1282

  Reddy, M ^a   Peterson, J M ^a   Lofgreen, D D ^a   Franklin, J A ^a   Vang, T ^a   Smith, E P G ^a   Wehner, J G A ^a   Kasai, I ^a   Bangs, J W ^a   Johnson, S M ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

CdZnTe; Cutoff wavelength; HgCdTe; HgCdTe macrodefects; HgCdTe on Si; MBE; Molecular beam epitaxy

Indexed keywords

CDZNTE; COST-EFFECTIVE APPROACH; CUT-OFF WAVELENGTHS; CUTOFF WAVELENGTH; DESIGN SPECIFICATIONS; GROWTH PARAMETERS; HGCDTE; HGCDTE MACRODEFECTS; HGCDTE ON SI; INFRARED(IR); IR-RADIATION; LARGE SIZES; LARGE-AREA WAFERS; MACRO-DEFECTS; MATE RIAL PROPERTIES; MBE; MBE-GROWTH; MOLECULAR BEAM EPITAXY (MBE); SHORT-WAVE; SI SUBSTRATES; SI(211); THIRD-GENERATION; WAFER MAPS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; COST EFFECTIVENESS; CRYSTAL GROWTH; ECOLOGY; EPITAXIAL GROWTH; MAPS; MERCURY COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SPECIFICATIONS; SUBSTRATES;

MOLECULAR BEAM EPITAXY;

EID: 51849155533     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0428-1     Document Type: Article

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