Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1145-1152

  Smith, E P G ^a   Patten, E A ^a   Goetz, P M ^a   Venzor, G M ^a   Roth, J A ^b   Nosho, B Z ^b   Benson, J D ^c   Stoltz, A J ^c   Varesi, J B ^c   Jensen, J E ^b   Johnson, S M ^a   Radford, W A ^a  

^a RAYTHEON COMPANY   (United States)

^b Hughes Aircraft Co   (United States)

^c U S ARMY   (United States)

Author keywords

HgCdTe; Inductively coupled plasma (ICP); Infrared detectors; Molecular beam epitaxy (MBE); Two color

Indexed keywords

DARK CURRENT; HGCDTE; OPERATING BIAS STABILITY; TWO-COLOR;

COLOR; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY;

INFRARED DETECTORS;

EID: 33746211439     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0234-6     Document Type: Conference Paper

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