Experimental characterization and simulation of RF intermodulation linearity in a 90 nm RF CMOS technology

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2008, Pages 251-254

  Wei, Xiaoyun ^a   Niu, Guofu ^a   Li, Ying ^a   Yang, Ming Ta ^b   Taylor, Stewart S ^c  

^a AUBURN UNIVERSITY   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c INTEL CORPORATION   (United States)

Author keywords

BSIM4; Linearity; LNA; RF CMOS

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; LINEARIZATION; RADIO WAVES; SUPERCONDUCTING DEVICES;

BSIM4; EXPERIMENTAL CHARACTERIZATION; FIRST ORDER THEORY; LINEARITY; LNA; RADIO FREQUENCY INTEGRATED CIRCUITS; RF CMOS; RF CMOS TECHNOLOGIES;

INTERMODULATION;

EID: 51849112458     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2008.4561429     Document Type: Conference Paper

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