RF distortion analysis with compact MOSFET models

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2004, Pages 9-12

  Bendix, Peter ^a   Rakers, P ^b   Wagh, P ^b   Lemaitre, L ^b   Grabinski, W ^b   McAndrew, C C ^b   Gu, X ^c   Gildenblat, G ^c  

^a LSI Logic Inc

^b MOTOROLA INC   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Distortion; FFT; Harmonic analysis; IMS; MOSFET modeling; RF CMOS

Indexed keywords

DISTORTION; IM3; MOSFET MODELING; RF CMOS;

CMOS INTEGRATED CIRCUITS; DISTORTION (WAVES); FAST FOURIER TRANSFORMS; FUNCTIONS; HARMONIC ANALYSIS; MATHEMATICAL MODELS; SIMULATORS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 17044440049     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, 1998.
2. N. Scheinberg and A. Pinkhasov, "A Computer Simulation Model for Simulating Distortion in FET Resistors," IEEE Trans. CAD, vol. 19, no. 9, pp. 981-989, Sep. 2000.
3. G. Gildenblat, T.-L. Chen, X. Gu, H. Wang, and X. Cai, "SP: An advanced Surface-Potential Based Compact MOSFET Model," Proc. IEEE CICC, pp. 233-240, 2003.
4. W. Liu, MOSFET Modeling for SPICE Simulation Including BSIM3v3 and BSIM4, John Wiley and Sons, 2001.
5. W. H. Press, B. P. Flannery, S. A. Eukolsky, and W. T. Vettering, Numerical Recipes in C, Cambridge University Press, 1988.
6. K. Joardar, K. K. Gullapalli, C. C. McAndrew, M. E. Burnham, and A. Wild, "An Improved MOSFET Model for Circuit Simulation," IEEE Trans. Electron Devices, vol. 45, no. 1, pp. 134-148, Jan. 1998.
7. T. Grotjohn and B. Hoefflinger, "A Parametric Short-Channel Transistor Model for Subthreshold and Strong Inversion Current," IEEE J. Solid-State Circuits, vol. 9, no. 1, pp. 100-112, Feb. 1984.
8. N. D. Arora, R. Rios, C.-L. Huang, and K. Raol, "PCIM: A Physically Based Continuous Short-Channel IGFET Model for Circuit Simulation," IEEE Trans. Electron Devices, vol. 41, no. 6, pp. 988-997, Jun. 1994.