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Volumn , Issue , 2008, Pages 424-428

Electro-thermally activated degradation of blu-ray GaN-based laser diodes

Author keywords

Degradation; Diffusion; Gallium nitride; Laser diode; Reliability

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; LITHIUM BATTERIES; RELIABILITY ANALYSIS; SEMICONDUCTING GALLIUM;

EID: 51549106544     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558922     Document Type: Conference Paper
Times cited : (1)

References (9)
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    • Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing
    • L. L. Goddard, M. Kneissl, D. P. Bour, and N. M. Johnson, "Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing", J. Appl. Phys. Vol. 88, pp. 3820-3823, 2000
    • (2000) J. Appl. Phys , vol.88 , pp. 3820-3823
    • Goddard, L.L.1    Kneissl, M.2    Bour, D.P.3    Johnson, N.M.4
  • 5
    • 33646861381 scopus 로고    scopus 로고
    • L. Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, and M. Leszczynski, Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals, Appl. Phys. Lett. 88, pp. 201111-1-3, 2006
    • L. Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, and M. Leszczynski, "Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals", Appl. Phys. Lett. Vol. 88, pp. 201111-1-3, 2006
  • 9
    • 0003430235 scopus 로고    scopus 로고
    • Hydrogen in wide bandgap semiconductors
    • H. S. Nalwa, Ed. New York: Academic/Harcourt, ch. 5, pp
    • S. J. Pearton and J.W. Lee, "Hydrogen in wide bandgap semiconductors," in Advanced Electronic and Photonic Materials and Devices, vol. 1, H. S. Nalwa, Ed. New York: Academic/Harcourt, 2000, ch. 5, pp. 191-220.
    • (2000) Advanced Electronic and Photonic Materials and Devices , vol.1 , pp. 191-220
    • Pearton, S.J.1    Lee, J.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.