Contributions and limits of charge pumping measurement for addressing trap generation in high-K/SiO2 dielectric stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 341-346

  Rafik, M ^a,b   Ribes, G ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; RELIABILITY PHYSICS; TRAP GENERATION;

RELIABILITY;

EID: 51549088419     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558909     Document Type: Conference Paper

References (19)

1. S. Brugler and P. G. A. Jespers. "Charge pumping in MOS devices, " IEEE Trans. on Electron. Devices ED-16 (3), pp. 297-302. 1969.
2. G. Groeseneken et al. "A reliable approach to chargepumping measurements in MOS transistors, " IEEE Trans. on Electron. Devices, vol. ED-31, no. 1, pp. 42-53, Jan. 1984.
3. D. Bauza et al, "Analyitical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures, "Solid-State Electron., vol. 39 (4), pp. 563-570, 1996.
4. 2 interface and near-interface oxide traps, " IEEE, Trans. on Electron. Devices, vol. 41, no. 7, pp. 1213-1216, Jul. 1994.
5. M. B. Zahid et al. Investigation of channel lenghth dependent time-to-breakdown with variable frequency charge pumping, " IEEE, SISC, 2005.
6. 2 Gate Stack, " IEEE Trans. on Electron Devices, vol. 54, no. 6, June 2007.
7. D. Bauza et al, "In-Depth Exploration of Si-SiO2 Interface Traps in MOS Transistors Using the Charge Pumping Technique, " IEEE Trans. on Electron. Devices, vol. 44. no. 12, pp. 2262-2266, Dec. 1997.
8. 2 interface trap time constant distribution in metal-oxide-semiconductor transistors," J. Appl. Phys.. vol. 9, no. 8, pp. 4187-4192, 2004.
9. W.Shockley, W.T. Read, "Statistics of the recombinaison of hole and electrons, " Phys. Rev., vol. 87 (5), pp. 835-842, 1952.
10. . P. Heiman and G. Warfield, "The effects of oxide traps on the MOS capacitance, " IEEE, Trans. on Electron. Devices, vol. ED-12. no. 4, pp. 167-178, Apr. 1965.
11. Y. Maneglia et al, "Extraction of slow oxide trap concentration profiles in metal-oxide-semiconductor transistors using the charge pumping method, " J. Appl. Phys., vol. 79, no. 8. pp. 4187-4192, Apr. 1996.
12. G. Bersuker et al. "The effect of interfacial layer properties on the performance of Hf-based gate stack devices" J. Appl. Phys., vo. 100, no. 9. p. 094108-14, Nov. 2006.
13. C. D. Young et al, "Electron Trap Generation in High-k Gate Stacks by Constant Voltage Stress, " IEEE. Trans. on Dev. and Materials Reliability, vol. 6, no. 2, June 2006.
14. M. Rafik et al. "Impact of TiN Metal Gate on NBTI assessed by Inte/face States and Fast Transient Effect Characterization, " in IEDM Tech. Dig., 2007, pp. 825-826.
15. 2 gate stacks, " in IEDM Tech. Dig., 2006.
16. G. Luckovsky et al, "Intrinsic limitations for CMOS with High-k gate dielectrics : electrically-active boundary and oxygen atom defect states, " Solid States Device conference, ESSDERC, pp. 439-444, 2005.
17. X. Xiong et al, "Characterization of Electrically Active Defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements, " in Proc. INFOS, 2007, pp.2230-2234.
18. 2 Gate Stacks: depth distribution and identification," International Reliability Workshop, 2007.
19. S. C. Song et al, "Mechanism of Vfb roll-off with High-Work function MG and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function, " in IEDM Tech. Dig., 2007, pp. 337-340.