Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1882-1885

  Ferain, I ^a,b   Pantisano, L ^b   Kottantharayil, A ^c   Petry, J ^d   Trojman, L ^a,b   Collaert, N ^b   Jurczak, M ^b   De Meyer, K ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Hafnium silicon oxynitride; Nitridation; Threshold voltage

Indexed keywords

DIELECTRIC MATERIALS; NITRIDATION; THRESHOLD VOLTAGE;

GATE LEAKAGE; HAFNIUM SILICON OXYNITRIDE (HFSION) DIELECTRICS; METAL GATE;

MOSFET DEVICES;

EID: 34249088711     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.074     Document Type: Article

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