Bumpless interconnect of 6-μm pitch Cu electrodes at room temperature

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2008, Pages 1405-1409

  Shigetou, Akitsu ^a   Itoh, Toshihiro ^b   Sawada, Kanako ^c   Suga, Tadatomo ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; ELECTRODES; ION BOMBARDMENT; METAL CLADDING; REACTIVE ION ETCHING;

CU DAMASCENE; ELECTRONIC COMPONENTS; ROOM TEMPERATURES;

COPPER;

EID: 51349122738     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2008.4550161     Document Type: Conference Paper

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