Band-edge emission enhancement by longitudinal stress field in GaN

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Cai, Duanjun ^a   Kang, Junyong ^b   Gibart, Pierre ^c   Beaumont, Bernard ^c   Sekiguchi, Takachi ^d   Ito, Shun ^e  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b XIAMEN UNIVERSITY   (China)

^c LUMILOG   (France)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVES; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LUMINESCENCE; MICROSCOPIC EXAMINATION; RISK ASSESSMENT; STRESSES;

BAND EDGES; BAND-EDGE EMISSIONS; LONGITUDINAL STRESSES;

SEMICONDUCTING GALLIUM;

EID: 51349106191     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973673     Document Type: Article

References (24)

1. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
2. L. Jastrzebski, J. Cryst. Growth 63, 493 (1983).
3. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 144, 133 (1994).
4. E. O. Göbel, H. Jung, J. Kuhl, and K. Ploog, Phys. Rev. Lett. 51, 1588 (1983).
5. S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, and N. Iwasa, J. Appl. Phys. 74, 3911 (1993).
6. H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).
7. B. J. Skromme, H. Zhao, D. Wang, H. S. Kong, M. T. Leonard, G. E. Bulman, and R. J. Molnar, Appl. Phys. Lett. 71, 829 (1997).
8. T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).
9. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).
10. P. Gibart, B. Beaumont, and S. J. Chua, J. Cryst. Growth 201, 365 (1999).
11. X. Li, P. W. Bohn, J. Kim, J. O. White, and J. J. Coleman, Appl. Phys. Lett. 76, 3031 (2000).
12. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, and N. Sawaki, Appl. Phys. Lett. 74, 359 (1999).
13. D. Cai, F. Xu, J. Kang, P. Gibart, and B. Beaumont, Appl. Phys. Lett. 86, 211917 (2005).
14. P. Venńgùs, B. Beaumont, V. Bousquet, M. Vaille, and P. Gibart, J. Appl. Phys. 87, 4175 (2000).
15. S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, J. Appl. Phys. 91, 5867 (2002).
16. M. A. Reshchikov and H. Morko̧, J. Appl. Phys. 97, 061301 (2005).
17. J. T. Fourie and H. G. F. Wilsdorf, J. Appl. Phys. 31, 2219 (1960).
18. P. E. Price, J. Appl. Phys. 32, 1750 (1961).
19. D. Hull and D. J. Bacon, Introduction to Dislocations (Pergamon, New York, 1984).
20. F. Bassani and G. Pastori-Parravicini, Electronic States and Optical Transitions in Solids (Pergamon, New York, 1975).
21. P. Hohenberg and W. Khon, Phys. Rev. 0096-8269 10.1103/PhysRev.136.B864 136, B864 (1964); W. Khon and L. J. Sham, Phys. Rev. 140, A1133 (1965).
22. A. Kaschner, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki, Appl. Phys. Lett. 74, 3320 (1999).
23. E. Burstein, Phys. Rev. 93, 632 (1954).
24. H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas, J. Appl. Phys. 76, 2429 (1994).