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Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

GaN quantum dots grown on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy

(4) Hori, Y a Oda, O a Bellet Amalric, E b Daudin, B b

a NGK INSULATORS LTD (Japan)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; INTERFACIAL ENERGY; LATTICE CONSTANTS; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS;

CHEMICAL COMPOSITION; MORPHOLOGICAL PROPERTIES; REAL-TIME MONITORING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547575804 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2759168 Document Type: Article

Times cited : (8)

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