Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method

Surface and Coatings Technology

Volumn 202, Issue 22-23, 2008, Pages 5259-5261

  Yun, Yongsup ^a   Yoshida, Takanori ^a   Shimazu, Norifumi ^a   Nanba, Naoki ^a   Inoue, Yasushi ^a   Saito, Nagahiro ^a   Takai, Osamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Binder film of nano cluster; FT IR; OES; Water contact angle; XPS

Indexed keywords

AERODYNAMICS; AMORPHOUS CARBON; ARGON; CHEMICAL BONDS; CONTACT ANGLE; DANGLING BONDS; FLOW OF GASES; FLOW RATE; GAS DYNAMICS; GASES; ION BOMBARDMENT; OPTICAL DESIGN; PLASMAS; RATE CONSTANTS; SILANES; SILICON COMPOUNDS; THICK FILMS;

BINDER FILM OF NANO-CLUSTER; CAPACITIVELY COUPLED; CARBON NETWORKS; CHEMICAL-BONDING STATES; DISSOCIATION REACTIONS; FILM PROPERTIES; FT-IR; GAS-FLOW RATES; GAS-FLOW RATIO; OES; ORGANOSILICON; PLASMA REACTIONS; RF-PECVD; THIN FILMS; WATER CONTACT ANGLE; XPS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 50349084643     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.06.004     Document Type: Article

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