Physical model for NAND operation in SOI and body-tied nanocrystal FinFLASH memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 943-946

  Perniola, L ^a   Nowak, E ^a   Iannaccone, G ^b   Scheiblin, P ^a   Jahan, C ^a   Pananakakis, G ^c   Razafindramora, J ^a   De Salvo, B ^a   Deleonibus, S ^a   Reimbold, G ^a   Boulanger, F ^a  

^a CEA LETI   (France)

^b UNIVERSITY OF PISA   (Italy)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHARGE DISTRIBUTION; CHARGE TRAPPING; CHLORINE COMPOUNDS; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRON DEVICES; FINS (HEAT EXCHANGE); MOSFET DEVICES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY;

3-D STRUCTURES; BODY TIED; DATA-RETENTION; FOWLER-NORDHEIM; PHYSICAL MODEL; SEMI-ANALYTICAL MODELING; SOI DEVICES; TRAPPED CHARGES; UNIFORM STRESS;

THREE DIMENSIONAL;

EID: 50249172806     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419108     Document Type: Conference Paper

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