In depth analysis of channel length, fin width (down to 10 nm) impacts on Fowler-Nordheim program/erase characteristics of Si-NC SOI FinFlash memories

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 42-43

  Perniola, L ^a   Razafindramora, J ^a   Nowak, E ^a   Scheiblin, P ^a   Jahan, C ^a   Gely M ^a   Vizioz, C ^a   Allain, F ^a   Lombardo, S ^b   Bongiorno, C ^b   Reimbold, G ^a   Boulanger, F ^a   De Salvo, B ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FINS (HEAT EXCHANGE); FLASH MEMORY; GATE DIELECTRICS; GATES (TRANSISTOR); NANOCLUSTERS; NANOSTRUCTURES; NONMETALS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; SILICON; THREE DIMENSIONAL;

CHANNEL LENGTHS; FIN WIDTHS; FOWLER-NORDHEIM; IN DEPTH ANALYSIS; NON-VOLATILE; OPERATING VOLTAGES; PROGRAMMING WINDOW; SCALING PROBLEMS; SEMICONDUCTOR MEMORIES; SENSING CURRENTS; SHORT-CHANNEL EFFECT (SCE); SILICON NANOCRYSTAL; STORAGE NODES; TCAD SIMULATIONS; TRI-GATE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 48649100495     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290573     Document Type: Conference Paper

References (6)

1. S.H.Lee et al., Tech. Dig. of IEDM 2006, p.33.
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3. B.deSalvo et al., Tech. Dig. IEDM 2003, p. 597.
4. C.Jahan et al., Symp. on VLSI Tech. 2005, p.112.
5. www.silvaco.com.
6. G.Fiori et al. IEEE Trans. on Nanotech. 2005, p. 326.