Femtosecond x-ray diffuse scattering measurements of semiconductor ablation dynamics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7005, Issue , 2008, Pages

  Lindenberg, A M ^a,b   Engemann, S ^a   Gaffney, K J ^a   Sokolowski Tinten, K ^c   Larsson, J ^d   Reis, D ^e   Lorazo, P ^f   Hastings, J B ^a  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b Stanford University   (United States)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

^d LUND INSTITUTE OF TECHNOLOGY   (Sweden)

^e UNIVERSITY OF MICHIGAN   (United States)

^f ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

Ablation; Femtosecond; X ray diffraction

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; LASER ABLATION; LASER APPLICATIONS; LASERS; NUCLEATION; PHOTOEXCITATION; PULSED LASER DEPOSITION; SCATTERING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

ABLATION DYNAMICS; AMPLITUDE DENSITY; FEMTOSECOND; FEMTOSECOND TIME-RESOLVED; FEMTOSECOND X RAYS; HIGH-POWER LASERS; LIQUID STATES; MD SIMULATIONS; NANOSCALE VOIDS; NUCLEATION PROCESSES; OPTICAL EXCITATIONS; SEMICONDUCTING MATERIALS; SMALL-ANGLE SCATTERING; ULTRA-FAST; X-RAY DIFFRACTION; X-RAY DIFFUSE SCATTERING;

ABLATION;

EID: 50249127094     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.784094     Document Type: Conference Paper

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