Band-to-band tunneling induced substrate hot-electron (BBISHE) injection: A new programming mechanism for nonvolatile memory devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 263-266

  Chen, I C ^a   Kaya, C ^a   Paterson, J ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR; ELECTRONS--TUNNELING; SEMICONDUCTING SILICON;

BAND-TO-BAND TUNNELING; EPROM; GATE CURRENT INJECTION; HOT ELECTRON; NONVOLATILE MEMORY; P-TYPE SILICON;

DATA STORAGE, DIGITAL;

EID: 0024895151     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)