90-nm-node multi-level AG-AND type flash memory with cell size of true 2 F2/bit and programming throughput of 10 MB/s

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 823-826

  Sasago, Y ^a   Kurata, H ^a   Arigane, T ^a   Otsuga, K ^a   Kobayashi, T ^a   Ikeda, Y ^b   Fukumura, T ^b   Narumi, S ^b   Sato, A ^b   Terauchi, T ^b   Shimizu, M ^b   Noda, S ^b   Kozakai, K ^b   Tsuchiya, O ^b   Furusawa, K ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC FIELDS; EXTRAPOLATION; FIELD PROGRAMMABLE GATE ARRAYS; GATES (TRANSISTOR); MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; VOLTAGE CONTROL;

HOT ELECTRON INJECTION; MULTI-LEVEL CELL TECHNOLOGY; VOLTAGE DROP;

FLASH MEMORY;

EID: 17644446435     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. Kobayashi et al., IEDM Digest of Technical Papers, p. 29, 2001.
2. H. Kurata et al., Symp. on VLSI Circuits, p. 302, 2002.
3. Y. Sasago et al., IEDM Digest of Technical Papers, p. 952, 2002.
4. K. Yoshida et al., IEEE Digest of Technical Papers, ISSCC, p. 288, 2002.