A multi-gate MOSFET compact model featuring independent-gate operation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 565-568

  Lu, Darsen D ^a   Dunga, Mohan V ^a   Lin, Chung Hsun ^a   Niknejad, Ali M ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; MOSFET DEVICES; POWDERS;

BACK GATES; BACK-GATE BIASING; BODY DOPING; COMPACT MODELING; CORE MODELING; DEVICE VARIATIONS; DYNAMIC FEEDBACKS; FITTING PARAMETERS; GATE OPERATIONS; MOSFETS; SHORT-CHANNEL EFFECTS; SRAM CELLS; TCAD SIMULATIONS;

FIELD EFFECT TRANSISTORS;

EID: 50249107489     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419001     Document Type: Conference Paper

References (8)

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8. M. V. Dunga et al., "BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design," Symp. VLSI Tech., p. 60, 2007.