Preparation of CuGaS2 thin films by two-stage MOCVD method

Solar Energy Materials and Solar Cells

Volumn 92, Issue 11, 2008, Pages 1311-1314

  Kim, Sin Kyu ^a   Park, Jong Pil ^a   Kim, Min Kyung ^a   Ok, Kang Min ^a   Shim, Il Wun ^a  

^a Chung Ang University   (South Korea)

Author keywords

CuGaS2 thin films; MOCVD; N ethylbutyldithiocarbamato)gallium(III); Tris(N

Indexed keywords

COPPER; GALLIUM;

CUGAS2 THIN FILMS; MOCVD; N-ETHYLBUTYLDITHIOCARBAMATO)GALLIUM(III); TRIS(N;

COPPER COMPOUNDS;

EID: 50249092676     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.05.003     Document Type: Article

References (16)

1. Shay J.L., and Wernick J.H. International Series of Monographs on Science of the Solid State vol. 7 (1975), Pergamon Press, UK, Oxford
2. Birkmire R.W. Compound polycrystalline solar cells: recent progress and Y2K perspective. Sol. Energy Mater. Sol. Cells 65 (2001) 17
3. Jäger-Walbau A. Status of thin film solar cells in research, production and the market. Sol. Energy 77 (2004) 667
4. 2 thin films grown by modulated flux deposition with various Cu contents. Phys. Status Solidi (a) 203 (2006) 2438
5. 2 thin films grown by MOVPE. Thin Solid Films 480-481 (2005) 188
6. 2 thin films by electron beam evaporation. Sol. Energy Mater. Sol. Cells 75 (2003) 93
7. 2 layers by low-pressure metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 34 (1995) 3991
8. Kim K.S., Jeong H.C., Cho J.Y., Kang D.H., Kim H.K., Yoo H.M., and Shim I.W. Preparation of copper (Cu) thin films by MOCVD and their conversion to copper selenide (CuSe) thin films through selenium vapor deposition. Bull. Korean Chem. Soc. 24 (2003) 647
9. 2. Bull. Korean Chem. Soc. 24 (2003) 645
10. Kim H.K., Jeong H.C., Kim K.S., Yoon S.H., Lee S.S., Seo K.W., and Shim I.W. Preparation of silver thin films using liquid-phase precursors by metal organic chemical vapor deposition and their conversion to silver selenide films by selenium vapor deposition. Thin Solid Films 478 (2005) 72
11. 2 thin films through metal organic chemical vapor deposition method by using di-μ-methylselenobis(dimethylindium) and bis(ethylisobutyrylacetato) copper(II) precursors. Thin Solid Films 515 (2006) 1544
12. 2 thin films using copper- and indium/sulfide-containing precursors through a two-stage MOCVD method. Inorg. Chem. 46 (2007) 1013
13. Lazell M.R., O'Brien P., Otway D.J., and Park J.-H. Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques. Mater. Res. Soc. Symp. Proc. 606 (2000) 127
14. Medina I., and Fink M.J. Silylated gallium-sulfur ring systems as single source precursors to hexagonal gallium sulfide (GaS). Mater. Sci. Eng. B 116 (2005) 375
15. Power Diffraction File, Joint Committee on Power Diffraction Standard, ICDD, September 1995, Card No. 25-0279. Version 1.10.
16. xS films. Renew. Energy 20 (2000) 405