Structural and electrical properties of CuGaS2 thin films by electron beam evaporation

Solar Energy Materials and Solar Cells

Volumn 75, Issue 1-2, 2003, Pages 93-100

  Jeong, Woon Jo ^a   Park, Gye Choon ^b  

^a Hanlyo University   (South Korea)

^b Mokpo National University   (South Korea)

Author keywords

CuGaS2; Lattice constant; Mobility; Polycrystalline; Resistivity; Single phase

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; LATTICE CONSTANTS; OPTOELECTRONIC DEVICES; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS;

ELECTRON BEAM EVAPORATION;

THIN FILMS;

EID: 0037209855     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00110-1     Document Type: Article

References (9)

1. Shirakata S., Chichibu S. J. Appl. Phys. 87:2000;3793.
2. Hara K., Kojima T., Kukimoto H. Jpn. J. Appl. Phys. Lett. 22:1973;351.
3. Oishi K., Kobayashi S., Kaneco F. J. Cryst. Growth. 153:1995;158.
4. Susaki M., Horinaca H., Yamamoto N. Jpn. J. Appl. Phys. 30:1991;2797.
5. Hara K., Shinozawa T., Yoshino J., Kukimoto H. J. Cryst. Growth. 93:1988;771.
6. Tinoco T., Itie J.P., Polian A., San Miguel A., Moya E., Grima P., Gonzalez J. J. Phys. 4:1994;C9-151.
7. Honda T., Otoma H., Hara K., Yoshino J., Kukimoto H. Jpn. J. Appl. Phys. 32:1993;L560.
8. Miyake H., Hata M., Sugiyama K. J. Cryst. Growth. 130:1993;383.
9. Wagner S., Shay J.L., Tell B., Kaspe H.M. J. Appl. Phys. Lett. 22:1973;351.