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Volumn 116, Issue 3 SPEC.ISS., 2005, Pages 375-379

Silylated gallium-sulfur ring systems as single source precursors to hexagonal gallium sulfide (GaS)

Author keywords

Gallium sulfide; Organometallic chemical vapor deposition; Thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETHYLENE; HYDROCARBONS; MELTING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOVOLTAIC CELLS; THERMOGRAVIMETRIC ANALYSIS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 15744392281     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.051     Document Type: Conference Paper
Times cited : (9)

References (14)
  • 2
    • 85166100431 scopus 로고    scopus 로고
    • Abbreviations: CVD (chemical vapor deposition) AACVD (aerosol assisted chemical vapor deposition)
    • Abbreviations: CVD (chemical vapor deposition) AACVD (aerosol assisted chemical vapor deposition).
  • 12
    • 85166083995 scopus 로고    scopus 로고
    • M.S. thesis (M. Fink, advisor), Department of Chemistry, Tulane University
    • 2 ring cores, M.S. thesis (M. Fink, advisor), Department of Chemistry, Tulane University, 2002.
    • (2002) 2 Ring Cores
    • Medina, I.1
  • 13
    • 85166119758 scopus 로고    scopus 로고
    • note
    • Due to the relatively low melting point of the aluminum (mp = 660 °C), we did not set the temperature program past 500 °C.
  • 14
    • 85166138321 scopus 로고    scopus 로고
    • note
    • The weight variance of the aluminum pan/lid assemblies do not contribute significantly to errors in % weight loss. A sample of 10 different assemblies gave a median weight of 56.76 mg with a standard deviation of 0.29 mg. Since average sample weights were approximately 35 mg the relative error is <1%.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.