ESD robustness of AlGaN/GaN HEMT devices

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2007, Pages

  Tazzoli, A ^a   Danesin, F ^a   Zanoni, E ^a   Meneghesso, G ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; FILAMENTS (LAMP); GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

ALGAN/GAN HEMT; DC BIAS; DIODE MEASUREMENTS; EMISSION MICROSCOPIES; ESD ROBUSTNESS; FAILURE CRITERION; FAILURE CURRENTS; FAILURE MECHANISMS; GAN-HEMT; INTERESTING INFORMATIONS; LEAKAGE MEASUREMENTS; TLP STRESS;

DRAIN CURRENT;

EID: 51849154722     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EOSESD.2007.4401762     Document Type: Conference Paper

References (11)

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