Influence of indenter angle on cracking in Si and Ge during nanoindentation

Acta Materialia

Volumn 56, Issue 16, 2008, Pages 4458-4469

  Jang, Jae il ^a   Pharr, G M ^b,c  

^a Hanyang University   (South Korea)

^b University of Tennessee Knoxville   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Cracking; Nanoindentation; Semiconductors; Toughness

Indexed keywords

FRACTURE FIXATION; FRACTURE TOUGHNESS; GERMANIUM; MECHANICAL PROPERTIES; SILICON; SILICON WAFERS; SINGLE CRYSTALS; VICKERS HARDNESS TESTING;

CENTER LINES; CRACK LENGTHS; CRACKING; CRACKING BEHAVIORS; CRACKING THRESHOLD; CRYSTAL SI; INDENTATION LOADS; INDENTATION SIZE; INDENTER ANGLE; INDENTERS; NANOINDENTATION EXPERIMENTS; SEMICONDUCTORS; TOUGHNESS;

NANOINDENTATION;

EID: 50149096796     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2008.05.005     Document Type: Article

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