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Volumn , Issue , 2007, Pages 215-221

High aspect ratio vias first for advanced packaging

Author keywords

3D integration; Backside technology; Doped polysilicon filling; DRIE; Electrical resistance; High aspect ratio trenches; Via first

Indexed keywords

ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; NONMETALS; PACKAGING; PHOTORESISTS; POLYSILICON; PRESSURE DROP; SILICON; SILICON WAFERS; TECHNOLOGY; WAFER BONDING;

EID: 50049125339     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPTC.2007.4469792     Document Type: Conference Paper
Times cited : (8)

References (14)
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    • Rao R. Tummala - "SOP: What is it and why? A new Microsystems-Integration Technology Paradigm-Moore's Law for system integration of miniaturized convergent systems of the next decade" - IEEE Transactions On advanced Packaging - Vol 27, No 2, may 2004 - pp 241-249
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  • 3
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  • 4
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    • Through vias technology for System on wafer approach
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    • D. Henry et Al - "Through vias technology for System on wafer approach" - ENCAST Workshop Zurich - 08 & 09 november 2005.
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    • Henry, D.1    et Al.2
  • 6
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    • High-Performance Vertical Interconnection for high density 3D Chip Stacking Package
    • Las Vegas, Nevada, May
    • M Umemoto et Al - "High-Performance Vertical Interconnection for high density 3D Chip Stacking Package" 54th Electronic Components and Technology Conf, Las Vegas, Nevada, May 2004, pp.616-623.
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  • 7
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    • high density, high aspect ratio through-wafer electrical interconnect vias for MEMS packaging
    • august
    • Seong Joon Ok, et Al - "high density, high aspect ratio through-wafer electrical interconnect vias for MEMS packaging", IEEE transactions on advanced packaging, vol 26, No3, august 2003.
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  • 8
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    • Chow E.M. et Al - "Though wafer electrical interconnect compatible with standard semiconductor processing", Solid state Sensors and actuators workshop, South Carolina, June 4-8 2000, pp 343-6.
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  • 10
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    • P.S. Andry et Al - A CMOS compatible process for fabricating electrical through vias in Silicon, ECTC 2006, San Diego 30-05 / 02-06 2006.
    • P.S. Andry et Al - "A CMOS compatible process for fabricating electrical through vias in Silicon", ECTC 2006, San Diego 30-05 / 02-06 2006.
  • 11
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    • Development of cost effective high density through wafer interconnect for 3D microsystems
    • N. Lietaer, et Al - "Development of cost effective high density through wafer interconnect for 3D microsystems", Journal of micromechanics and microengineering, 2006, Vol 16, S29-S34.
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  • 12
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    • U. Heinle, et Al - Vertical high voltage devices on thick SOI with back-end trench formation, ESSDERC 2002.
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  • 13
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    • Fabrication of Keyhole free ultra-deep high aspect ratio isolation trench and its applications
    • Yong Zhu, et Al - "Fabrication of Keyhole free ultra-deep high aspect ratio isolation trench and its applications", Journal of micromechanics and microengineering, 2005, Vol 15, 636-642
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  • 14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.