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Journal of Applied Physics

Volumn 70, Issue 3, 1991, Pages 1553-1560

Low hydrogen content stoichiometric silicon nitride films deposited by plasma-enhanced chemical vapor deposition

(3) Parsons, G N a Souk, J H a Batey, J a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000513694 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.349544 Document Type: Article

Times cited : (186)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.