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Volumn 108, Issue 10, 2008, Pages 1070-1075
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Resolution enhancing using cantilevered tip-on-aperture silicon probe in scanning near-field optical microscopy
b
RAITH GmbH
(Germany)
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Author keywords
Electromagnetic field enhancement; Electronic beam induced deposition (EBID); Scanning near field microscopy; Tip on aperture (TOA) probe
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Indexed keywords
CONCENTRATION (PROCESS);
ELECTRIC FIELDS;
ELECTROMAGNETIC FIELD THEORY;
ELECTROMAGNETIC FIELDS;
ELECTROMAGNETISM;
ELECTRON BEAM LITHOGRAPHY;
ELECTRON BEAMS;
ELECTRON OPTICS;
FINITE DIFFERENCE METHOD;
IMAGING TECHNIQUES;
ION BOMBARDMENT;
LAWS AND LEGISLATION;
LIGHT;
MAGNETIC FIELDS;
NONMETALS;
NUMERICAL ANALYSIS;
OPTICAL DATA STORAGE;
OPTICAL INSTRUMENTS;
OPTICAL MICROSCOPY;
OPTICAL SYSTEMS;
PARTICLE BEAMS;
SCANNING;
SILICON;
TIME DOMAIN ANALYSIS;
APERTURE DIAMETER;
APERTURELESS SCANNING;
DIFFRACTION LIMITS;
ELECTROMAGNETIC FIELD ENHANCEMENT;
ELECTRON-BEAM-INDUCED DEPOSITION;
ELECTRONIC BEAM-INDUCED DEPOSITION (EBID);
FAR FIELDS;
FINITE-DIFFERENCE TIME-DOMAIN ANALYSIS;
FOCUSED ION BEAM MACHINING;
FOCUSED LASER BEAMS;
HIGHLY EFFICIENT;
LIGHT FIELDS;
MICROSCOPY SYSTEMS;
OPTICAL-;
PLASMON ENHANCEMENT;
SCANNING NEAR-FIELD MICROSCOPY;
SCANNING NEAR-FIELD OPTICAL MICROSCOPY;
SUB-WAVELENGTH APERTURES;
TIP APEX;
TIP-ON-APERTURE (TOA) PROBE;
NEAR FIELD SCANNING OPTICAL MICROSCOPY;
NANOMATERIAL;
SILICON;
SILVER;
ARTICLE;
ELECTROMAGNETIC FIELD;
ELECTRON BEAM;
ILLUMINATION;
MECHANICAL PROBE;
SCANNING NEAR FIELD OPTICAL MICROSCOPY;
CONCENTRATING;
DATA STORAGE;
DEPOSITION;
ELECTRIC FIELDS;
ELECTROMAGNETIC FIELDS;
ELECTRON BEAMS;
LIGHT;
LITHOGRAPHY;
MAGNETIC FIELDS;
MICROSCOPY;
NONMETALS;
OPTICAL INSTRUMENTS;
PROBLEM SOLVING;
SCANNING;
SILICON;
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EID: 49949084997
PISSN: 03043991
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ultramic.2008.04.078 Document Type: Article |
Times cited : (19)
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References (18)
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