Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2797-2801

  Wu, Gwo Mei ^a   Chung, Ta Jen ^a   Nee, Tzer En ^a   Kuo, Da Chuan ^a   Chen, Wei Jen ^a   Ke, Chih Chun ^a   Hung, Cheng Wei ^a   Wang, Jen Cheng ^a   Chen, Nei Chuan ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS; CARRIER LEAKAGE; CARRIER RECOMBINATION; ENERGY-BARRIER; EXCITON CONFINEMENT; HIGH-RESOLUTION X-RAY DIFFRACTION; INGAN/GAN; INTERFACE PROPERTIES; MULTIPLE QUANTUM WELL; MULTIPLE QUANTUM-WELL STRUCTURES; NITRIDE SEMICONDUCTORS; RADIATIVE RECOMBINATION; SI DELTA DOPING; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL STABILITY; VALENCE BANDS;

ACTIVATION ENERGY; ARRHENIUS PLOTS; CIVIL AVIATION; CRYSTALS; ELECTRIC CONDUCTIVITY; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; NITRIDES; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SILICON; THERMODYNAMIC STABILITY; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 49749125578     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674791     Document Type: Conference Paper

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