Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2768-2771

  Inada, T ^a   Satake, A ^a   Fujiwara, K ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CAPTURE; ELECTROLUMINESCENCE (EL); ELECTROLUMINESCENCE EFFICIENCIES; HIGH-BRIGHTNESS; INJECTION CURRENTS; INTENSITY VARIATIONS; LIGHT-EMITTING DIODE; LOW TEMPERATURES; MULTIPLE-QUANTUM WELLS; NITRIDE SEMICONDUCTORS; SINGLE QUANTUM WELLS; SPECTRAL INTENSITIES; VARIATION PATTERNS; WIDE TEMPERATURE RANGE;

CIVIL AVIATION; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; INJECTION (OIL WELLS); LIGHT; LIGHT EMISSION; LUMINESCENCE; NITRIDES; PHYSICAL OPTICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 49749112868     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674736     Document Type: Conference Paper

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