Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 636-640

  Bakmiwewa, P ^a   Hori, A ^a   Satake, A ^a   Fujiwara, K ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electroluminescence; InGaN; LED; Semiconductor quantum well

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; LIGHT POLARIZATION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUENCHING; SEMICONDUCTING INDIUM;

ELECTROLUMINESCENCE (EL); INGAN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642266936     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.094     Document Type: Conference Paper

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