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Volumn 4, Issue 8, 2007, Pages 3056-3060
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Electrical levels of nanoscale NiSi2 precipitates in silicon band gap
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC LEVELS;
EXTENDED DEFECTS;
INTERNATIONAL CONFERENCES;
NANO SCALING;
CRYSTALS;
EXPLOSIVE ACTUATED DEVICES;
SEMICONDUCTOR MATERIALS;
ELECTRIC CONDUCTIVITY;
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EID: 49549087115
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200775453 Document Type: Conference Paper |
Times cited : (5)
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References (10)
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