Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 424-425

  Mizutani, Takashi ^a   Makihara, Hiroshi ^a   Akita, Mitsutoshi ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Activation energy; AlGaN GaN HEMT; Frequency dispersion; Low frequency noise

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; ARRHENIUS PLOTS; DRAIN CONDUCTANCE; FREQUENCY DISPERSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038005551     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.424     Document Type: Article

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