Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2068-2072

  Ding, Z ^a   Thibado, P M ^a   Awo Affouda, C ^b   LaBella, V P ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM EQUIVALENT PRESSURE (BEP); ELECTRON BEAM EVAPORATION; SPIN POLARIZATION; X-RAY REFLECTIVITY;

COBALT; CRYSTAL MICROSTRUCTURE; DEPOSITION; ELECTRON BEAMS; EVAPORATION; FERROMAGNETIC MATERIALS; LATTICE CONSTANTS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SQUIDS; SURFACE ROUGHNESS; X RAY ANALYSIS;

MAGNETIC FILMS;

EID: 4944266436     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1771674     Document Type: Conference Paper

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