A novel trench concept for the fabrication of compensation devices

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 203-206

  Rub M ^a   Ahlers, D ^b   Baumgartl, J ^a   Deboy, G ^b   Friza, W ^a   Haberlen O ^a   Steinigke, I ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; REACTIVE ION ETCHING;

COMPENSATION DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0042014561     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. G. Deboy, M. März, J.-P. Stengl, H. Strack, J. Tihanyi and H. Weber, "A new generation of high voltage MOSFETs breaks the limit line of silicon", Tech. Digest IEDM 98, pp. 683-685, San Francisco 1998.
2. M. Saggio, D. Fagone, S. Musumeci, "MDmesh™: innovative technology for high voltage power MOSFETs", Proc. ISPSD 2000, pp. 65-68, Toulouse 2000.
3. T. Nitta, T. Minato, M. Yano, A. Uenisi and M. Harada, "Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)", Proc. ISPSD 2000, pp. 77-80, Toulouse 2000.
4. L. Lorenz, G. Deboy, A. Knapp and M. März, "CoolMOS™ - a new milestone in high voltage power MOS", Proc. ISPSD 99, pp. 3-10, Toronto 1999.
5. P.M. Shenoy, G. Dolny, "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET", Proc. ISPSD 99, pp. 99-102, Toronto 1999.