Single step quantum well Intermixing with multiple band gap control for III-V compound semiconductors

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3282-3285

  Djie, H S ^a,b   Mel, T ^a   Arokiaraj, J ^a   Nie, D ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BAND GAPS; QUANTUM WELL INTERMIXING (QWI); SPATIAL DEFECT MODULATED INTERMIXING (SDMI); SURFACE DEFECTS;

ANNEALING; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUITS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NEODYMIUM LASERS; PHOTODETECTORS; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY; ULTRAVIOLET RADIATION; WAVEGUIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4944227767     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1780608     Document Type: Article

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