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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1276-1279

Impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP by dielectric thin Cap films and characterization of its in-plane spatial resolution

(7) Sudo, Shinya a Onishi, Hirofumi a Nakano, Yoshiaki a Shimogaki, Yukihiro a Tada, Kunio a Mondry, Mark J b Coldren, Larry A b

a UNIVERSITY OF TOKYO (Japan)

b University of California (United States)

Author keywords

Dielectric cap film; Disordering; InGaAs InGaAlAs; InP; Photoluminescence; Quantum well; SiNx; SiO2; Spatial resolution; SrF2

Indexed keywords

CALCULATIONS; DIELECTRIC FILMS; HEAT TREATMENT; IMPURITIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; SILICON NITRIDE; STRONTIUM COMPOUNDS; THIN FILMS;

DIELECTRIC THIN CAP FILMS; IMPURITY FREE DISORDERING; POST EPITAXIAL PLANAR PROCESSING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030078893 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1276 Document Type: Article

Times cited : (29)

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