Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers

IEEE Photonics Technology Letters

Volumn 12, Issue 9, 2000, Pages 1141-1143

  Liu, X F ^a   Qiu, B C ^a   Ke, M L ^a   Bryce, A C ^a   Marsh, J H ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; INTEGRATED OPTOELECTRONICS; LASER TUNING; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICA; SPUTTER DEPOSITION;

MULTIPLE BANDGAP SHIFTS; QUANTUM WELL INTERMIXING;

QUANTUM WELL LASERS;

EID: 0034268769     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.874215     Document Type: Article

References (10)

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