Origin of the (110) orientation of Y2O3 and CeO2 epitaxial films grown on (100) silicon

Materials Research Society Symposium - Proceedings

Volumn 477, Issue , 1997, Pages 333-338

  Goettler, R L ^a   Maria, J P ^a   Schlom, D G ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; COMPUTATIONAL METHODS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; YTTRIUM COMPOUNDS;

LATTICE MISMATCH; SILICIDES;

SEMICONDUCTING FILMS;

EID: 0031368374     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-474-333     Document Type: Conference Paper

References (18)