Orientation selective epitaxial growth of CeO2(100) and CeO 2(110) layers on Si(100) substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 1, 2004, Pages 46-48

  Inoue, Tomoyasu ^a   Sakamoto, Naomichi ^a   Ohashi, Masayuki ^a   Shida, Shigenari ^a   Horikawa, Akihiro ^a   Sampei, Yoshiyuki ^b  

^a IWAKI MEISEI UNIVERSITY   (Japan)

^b Fukushima Technology Centre   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; GONIOMETERS; HIGH ENERGY ELECTRON DIFFRACTION; INDUCTIVELY COUPLED PLASMA; MAGNETRON SPUTTERING; OXIDATION; SILICON WAFERS; ULTRATHIN FILMS; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GAS FLOW RATES; SILICIDATION PROCESS; WET CLEANING PROCESSES;

CERIUM COMPOUNDS;

EID: 1242284607     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1626644     Document Type: Article

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