Effect of electron incidence in epitaxial growth of CeO2(110) layers on Si(100) substrates

Materials Research Society Symposium - Proceedings

Volumn 477, Issue , 1997, Pages 321-326

  Inoue, Tomoyasu ^a   Yamamoto, Yasuhiro ^a   Satoh, Masataka ^a  

^a IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAMS; EPITAXIAL GROWTH; EVAPORATION; FILM GROWTH; SEMICONDUCTING SILICON; SUBSTRATES; VACUUM;

ELECTRON BEAM ASSISTED EVAPORATION; ELECTRON INCIDENCE;

CERIUM COMPOUNDS;

EID: 0031347271     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-474-321     Document Type: Conference Paper

References (14)