Thermal stability of tungsten-titanium diffusion barriers for silver metallization

Thin Solid Films

Volumn 516, Issue 21, 2008, Pages 7451-7457

  Bhagat, S K ^a   Theodore, N D ^a,b   Alford, T L ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Diffusion barrier layers; Silver metallization; Titanium; Tungsten

Indexed keywords

AGGLOMERATION; ALUMINA; COPPER; DIFFUSION BARRIERS; ELECTRON MICROSCOPES; IMAGING TECHNIQUES; LIGHT METALS; MASS SPECTROMETERS; MASS SPECTROMETRY; MATERIALS SCIENCE; METALLIZING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON WAFERS; THERMODYNAMIC STABILITY; THICK FILMS; THIN FILMS; TITANIUM; TUNGSTEN; VAPOR DEPOSITION;

BARRIER LAYER; BARRIER LAYERS; COPPER METALLIZATION; DIFFUSION BARRIER LAYERS; FOUR-POINT PROBE ANALYSIS; IN-VACUUM; PROCESS TEMPERATURES; RUTHERFORD BACKSCATTERING SPECTROMETRY; SECONDARY ION MASS SPECTROSCOPY; SI-WAFER; SILICIDE FORMATION; SILVER FILMS; SILVER METALLIZATION; THERMAL STABILITY; TITANIUM FILMS; TITANIUM THIN FILMS; TRANSMISSION ELECTRON; X-RAY DIFFRACTOMETRY;

SILVER;

EID: 49349096517     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.03.021     Document Type: Article

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