Performance of vertical power devices with contact-level copper metallization

Thin Solid Films

Volumn 348, Issue 1, 1999, Pages 14-21

  Cook, Jeffrey ^a   Azam, Misbahul ^a   Leung, Pak ^a   Grupen, Melissa ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL BONDS; COPPER; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; PROBES;

BONDPAD SPREADING RESISTANCE; CONTACT LEVEL COPPER METALLIZATION; VERTICAL POWER DEVICES;

METALLIZING;

EID: 0032671151     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00165-0     Document Type: Article

References (31)

1. Alford T.L., Li J., Mayer J.W., Wang S.Q. Thin Solid Films. 262:1995;7.
2. Harper J.M.E., Colgan E.G., -K C. Hu, J.P. Hummel, L.P. Buchwalter, C.Z. Uzoh, MRS Bull. 8:1994;23.
3. Li J., Seidel T.E., Mayer J.W. MRS Bull. 8:1994;15.
4. Murarka S.P., Gutman R.J., Kaloyeros A.E., Lanford W.A. Thin Solid Films. 236:1993;257.
5. Singer P. Semiconduct. Int. 11:1994;52.
6. Gladkikh A., Lereah Y., Karpovski M., Palevski A., Kaganovskii Y.S. MRS Symp. Proc. 427:1996;121.
7. -K C. Hu. K.L. Lee, D. Gupta, P. Blauner, MRS Symp. Proc. 427:1996;95.
8. -K C. Hu. B. Luther, Mater. Chem. Phys. 41:1995;1.
9. Jo B.H., Vook R.W. Thin Solid Films. 262:1995;129.
10. Kononenko O.V., Matveev V.N., Koval Y.I., Dubonos S.V., Volkov V.T. MRS Symp. Proc. 1996;127.
11. Lloyd J.R., Clement J.J. Thin Solid Films. 262:1995;135.
12. Vook R.W., Jo B.H. MRS Symp. Proc. 427:1996;83.
13. H. Yamada, T. Hoshi, T. Takewaki, T. Shibata, T. Ohmi, T. Nitta, Evaluation of Electromigration and Stress Migration Reliabilities of Copper Interconnects by a Simple Pulsed-Current Stressing Technique, IEDM 1993 Conf. Proc., pp. 269-272.
14. Lanford W.A., Ding P.J., Wang W., Hymes S., Murarka S.P. Mater. Chem. Phys. 41:1995;192.
15. Wang S.Q. MRS Bull. 7:1994;30.
16. Raghavan G., Chiang C., Anders P.B., et al. Thin Solid Films. 262:1995;168.
17. Gardner D.S., Onuki J., Kudoo K., Misawa Y., Vu Q.T. Thin Solid Films. 262:1995;104.
18. Arita Y., Awaya N., Ohno K., Sato M. MRS Bull. 8:1994;68.
19. Bertz A., Werner T., Hille N., Gessner T. Appl. Surf. Sci. 91:1995;147.
20. Igarashi Y., Yamanobe T., Ito T. Jpn. J. Appl. Phys. 34:1995;1012.
21. Igarashi Y., Yamanobe T., Ito T. J. Electrochem. Soc. 142:(3):1995;L36.
22. Jain A., Kodas T.T., Hampden-Smith M.J. Thin Solid Films. 269:1995;51.
23. Ohshita Y., Hosoi N. Thin Solid Films. 262:1995;67.
24. Singer P. Semicond. Int. 3:1997;58.
25. Steinbrüchel C. Appl. Surf. Sci. 91:1995;139.
26. Jang S.Y., Lee S.M., Baik H.K. J. Mater. Sci.: Mater Electron. 7:1996;271.
27. Kottke M., Gregory R., Pintchovski F., Travis E., Tobin P.J. J. Vac. Sci. Technol. B. 9:(1):1991;74.
28. S.C. Sun, M.H. Tsai, H.T. Chiu, Performance of MOCVD Tantalum Nitride Diffusion Barrier for Copper Metallization, Proc. 1995 Symp. VLSI Technology, pp. 29-30.
29. Tsai M.H., Sun S.C., Tsai C.E., Chuang S.H., Chiu H.T. J. Appl. Phys. 79:(9):1996;6932.
30. Baliga B.J. Power Semiconductor Devices. 1996;PWS, Boston, MA. pp. 395-406, 526-533.
31. Weast R.C. CRC Handbook of Chemistry and Physics. 1983;E-76 CRC Press, Boca Raton, FL.