Demonstration of long-pulse power amplification at 1 GHz using 4H-SiC RF BJTs on a conductive substrate

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 398-400

  Zhao, Feng ^a   Van Zeghbroeck, Bert ^a,b   Torvik, Kris ^a   Shi, Tiefeng ^a   Mallinger, Mike ^a  

^a MICROSEMI CORPORATION   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

4H SiC; Bipolar junction transistors (BJTs); Conductive substrate; L band; Long pulse; Output power; Power gain; Power added efficiency (PAE); Radar; Radio frequency (RF)

Indexed keywords

AMPLIFICATION; CONDUCTIVE MATERIALS; POWER AMPLIFIERS; RADAR; SUBSTRATES;

CONDUCTIVE SUBSTRATE; POWER AMPLIFICATION; POWER GAIN; POWER-ADDED EFFICIENCY;

BIPOLAR TRANSISTORS;

EID: 34247552324     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895386     Document Type: Article

References (6)

1. F. Zhao, I. Perez-Wurfl, K. Torvik, J. Chiu, M. Mallinger, J. Torvik, and B. Van Zeghbroeck, "Rugged UHF 4H-SiC BJTs with record 22.8 W/mm power density and 8.3 dB gain," in Proc. Dig. Device Res. Conf., University Park, PA, Jun. 2006, pp. 153-154.
2. A. K. Agarwal, J. Haley, H. Bartlow, B. McCalpin, S. Krishnaswami, C. Capell, S. H. Ryu, and J. W. Palmour, "First demonstration of 2100 W output power at 425 MHz using 4H-SiC RF power BJTs," in Proc. Dig. Int. Conf. Silicon Carbide and Related Mater., Pittsburgh, PA, Sep. 2005, pp. 1413-1416.
3. F. Zhao, I. Perez-Wurfl, C. F. Huang, J. Torvik, and B. Van Zeghbroeck, "First demonstration of 4H-SiC RF BJTs on a semi-insulating substrate with ft/fmax of 7/5.2 GHz," in Proc. Dig. IEEE MTT-S Int. Microw. Symp., Long Beach, CA, Jun. 2005, pp. 2035-2038.
4. I. Perez-Wurfl, F. Zhao, C. F. Huang, J. Torvik, and B. Van Zeghbroeck, "4H-SiC bipolar transistors with UHF and L-band operation," in Proc. Dig. Int. Conf. Silicon Carbide and Related Mater., Pittsburgh, PA, Sep. 2005, p. 47.
5. K. Agarwal, M. Das, B. Hull, S. Krishnaswami, J. W. Palmour, J. Richmond, S. H. Ryu, and J. Zhang, "Progress in silicon carbide power devices," in Proc. Dig. Device Res. Conf., University Park, PA, Jun. 2006, pp. 155-158.
6. F. Zhao, "Design, analysis and experimental study of RE 4H-SiC npn bipolar junction transistors," Ph.D. dissertation, Univ. Colorado, Boulder, CO, Dec. 2004.