Studies on the properties of sputter-deposited Al-doped ZnO films

Superlattices and Microstructures

Volumn 44, Issue 3, 2008, Pages 268-275

  Selmi, M ^a   Chaabouni, F ^a   Abaab, M ^a   Rezig, B ^a  

^a UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

Author keywords

Antireflection coatings; Junction; RF magnetron sputtering; Zinc oxide

Indexed keywords

ALUMINA; ALUMINUM; CHEMICAL VAPOR DEPOSITION; INFRARED SPECTROSCOPY; LIGHT METALS; LITHOGRAPHY; MAGNETRON SPUTTERING; MATERIALS PROPERTIES; METALLIC FILMS; NONMETALS; OXIDES; PHOTONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SPUTTER DEPOSITION; SUBSTRATES; ZINC; ZINC ALLOYS; ZINC OXIDE;

AL-DOPED ZNO; ALUMINUM DOPED ZINC OXIDE FILMS; ANTIREFLECTION COATINGS; BAND GAPS; BUILT-IN-POTENTIAL; C -AXIS; CAPACITANCE-VOLTAGE; CRISTALLINITY; DEPOSITED FILMS; DEPOSITION TIME; DEPOSITION TIMES; HIGH CONDUCTIVITY; JUNCTION; JUNCTION PROPERTIES; MORPHOLOGICAL CHARACTERISTICS; OPTICAL TRANSMITTANCE; RF MAGNETRON SPUTTERING; SILICON SUBSTRATES; SUBSTRATE SURFACES; VISIBLE AND NEAR-INFRARED; ZNO:AL FILMS;

OXIDE FILMS;

EID: 49149103077     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.06.005     Document Type: Article

References (32)

1. Shih W.-C., Wang M.-J., and Nan Lin I. Diamond Relat. Mater. 17 (2008) 390-395
2. Minami T., Sato H., Nanto H., and Takata S. J. Appl. Phys. 24 (1985) L781-L784
3. Chaabouni F., Abaab M., and Rezig B. Sensors Actuators B 100 (2004) 200-204
4. Liang S., Sheng H., Liu Y., Huo Z., Lu Y., and Shen H. J. Cryst. Growth 225 (2001) 110-113
5. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Appl. Phys. Lett. 72 (1998) 3270-3272
6. Minami T., Yamanoto T., and Miyata T. Thin Solid Films 366 (2000) 63-68
7. Ogata K., Kawanishi T., Maejina K., Sakurai K., Fujita Sz., and Fujita Sg. J. Cryst. Growth 237-239 (2002) 553-557
8. Hong R., Shao J., He a H., and Fan Z. Appl. Surf. Sci. 252 (2006) 2888-2893
9. Choi B.G., Kim I.H., Kim D.H., Lee K.S., Lee T.S., Cheong B., Baik Y.-J., and Kim W.M. J. Eur. Ceramic Soc. 25 (2005) 2161-2165
10. Lin S.-S., and Huang J.-L. Surf. Coat. Technol. 185 (2004) 222-227
11. Mandal S., Singha R.K., Dhar A., and Ray S.K. Mater. Res. Bull. 43 (2008) 244-250
12. Lee J.-H., Ko K.-H., and Park B.-O. J. Cryst. Growth 247 (2003) 119-123
13. Kamalasanan M.N., and Chandra S. Thin Solid Films 288 (1996) 112-115
14. Natsume Y., and Sakata H. Thin Solid Films 372 (2000) 30-36
15. Ayouchi R., Martin F., Leinen D., and Ramos-Barrado J.R. J. Cryst. Growth 247 (2003) 497-504
16. Ohshima T., Thareja R.K., Ikegami T., and Ebihara K. Surf. Coat. Technol. 169-170 (2003) 517-520
17. Purica M., Budianu E., Rusu E., Danila M., and Gavrila R. Thin Solid Films 403-404 (2002) 485-488
18. Lu Y.M., Hwang W.S., Liu W.Y., and Yang J.S. Mater. Chem. Phys. 72 (2001) 269-272
19. Cullity D. Elements of X-Ray Diffraction. 2nd edition (1978), Addison-Wesley, Reading pp. 68-102
20. Park K.C., Ma D.Y., and Kim K.H. Thin Solid Films 305 (1997) 201-209
21. Kim H., Piqué A., Horwitz J.S., Murata H., Kafafi Z.H., Gilmore C.M., and Chrisey D.B. Thin Solid Films 377-378 (2000) 798
22. Weibenrieder K.S., and Muller J. Thin Solid Films 300 (1997) 30
23. Arndt D.P., Azzam R.M.A., Bennet J.M., et al. Appl. Sur. Sci. 65 (1993) 227-234
24. Moss T.S. Optical Properties of Semiconducteurs (1959), Butterworth, London
25. Swanepoel R. J. Phys. E16 (1983) 1214
26. In: Tauc J., and Abeles F. (Eds). Optical Properties of Solids (1970), North Holand, Amsterdam
27. Demiryont H., and Nietering K.E. Sol. Energy Mater. 9 (1989) 79-94
28. Zernani H., Demiryont H., and Collins G.J. J. Appl. Phys. 60 (1986) 2523-2529
29. Sze S.M. Physics of Semiconductor Devices. 2nd edition (1981), New York, Wiley p. 124
30. Jeong, Kim, and Im. Appl. Phys. Lett. 83 (2003) 2946-2948
31. Dimova-Malinovska D., and Nikolaeva M. Vacuum 69 (2003) 227-231
32. Song D., Neuhaus D., Xia J., and Aberle A.G. Thin Solid Films 422 (2002) 180-185