Photonic band-gap effects on photoluminescence of silicon nanocrystals embedded in artificial opals

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4471-4474

  Valenta, J ^a   Linnros, J ^b   Juhasz, R ^b   Rehspringer, J L ^c   Huber, F ^c   Hirlimann, C ^c   Cheylan, S ^d,e   Elliman, R G ^d  

^a CHARLES UNIVERSITY   (Czech Republic)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e ICFO INSTITUT DE CIENCIES FOTONIQUES   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; ELECTRIC FIELDS; ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SINTERING; ULTRAVIOLET RADIATION;

PHOTONIC BAND GAPS;

NANOSTRUCTURED MATERIALS;

EID: 0038341904     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1560565     Document Type: Article

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