Fabrication of GaInAsP/InP Photonic Crystal Lasers by ICP Etching and Control of Resonant Mode in Point and Line Composite Defects

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1347-1354

  Inoshita, Kyoji ^a   Baba, Toshihiko ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Defect laser; GaInAsP InP; ICP etching; Photonic band; Photonic bandgap (PBG); Photonic crystal (PC); Semiconductor laser

Indexed keywords

ASPECT RATIO; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CONTINUOUS WAVE LASERS; DRY ETCHING; FINITE DIFFERENCE METHOD; HEAT RESISTANCE; INDUCTIVELY COUPLED PLASMA; LATTICE CONSTANTS; LITHOGRAPHY; OPTIMIZATION; PHOTOLUMINESCENCE; POINT DEFECTS; POLARIZATION; Q FACTOR MEASUREMENT; SEMICONDUCTING GALLIUM;

DEFECT LASERS; GAINASP/INP; INDUCTIVELY COUPLED PLASMA (ICP) ETCHING; PHOTONIC BANDGAPS (PBG); PHOTONIC BANDS; PHOTONIC CRYSTALS (PC);

SEMICONDUCTOR LASERS;

EID: 1342345790     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819466     Document Type: Conference Paper

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