|
Volumn 116, Issue 1356, 2008, Pages 869-874
|
Visualization of microscopic stress fields in silica glass in the scanning electron microscope
|
Author keywords
Cathodoluminescence; MOS; Piezo spectroscopy; Residual stress; Silica
|
Indexed keywords
CATHODOLUMINESCENCE;
GLASS;
IONIZATION OF GASES;
METALS;
MOLYBDENUM;
MOS DEVICES;
OXIDE SEMICONDUCTORS;
POINT DEFECTS;
RESIDUAL STRESSES;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON;
STRESSES;
FIELD EMISSION SCANNING ELECTRON MICROSCOPES;
METAL OXIDE SEMICONDUCTOR;
MICROSCOPIC SCALE;
OPTICALLY ACTIVE;
PIEZO SPECTROSCOPY;
QUANTITATIVE MEASUREMENT;
STRESS FIELD;
SILICA;
|
EID: 48849114011
PISSN: 18820743
EISSN: 13486535
Source Type: Journal
DOI: 10.2109/jcersj2.116.869 Document Type: Article |
Times cited : (3)
|
References (18)
|