Strained Si-O-Si bonds in amorphous SiO2 materials: A family member of active centers in radio, photo, and chemical responses

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6243-6262

  Awazu, Koichi ^a   Kawazoe, Hiroshi ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b HOYA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEFECTS; DOPING (ADDITIVES); ELECTRIC INSULATION; EXCIMER LASERS; FLUORINE; FUSED SILICA; LIGHT ABSORPTION; NUCLEAR MAGNETIC RESONANCE; PARAMAGNETIC RESONANCE; THIN FILMS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

PLANAR RINGS;

AMORPHOUS SILICON;

EID: 0344515523     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618351     Document Type: Article

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